Infrared LED glossary
- Bare die
- An unpackaged LED chip sold for customers to assemble into their own packages or modules. Learn more
- Liquid phase epitaxy (LPE)
- A crystal growth method that deposits semiconductor layers from a molten solution onto a wafer as it cools. Learn more
- AlGaAs
- Aluminum gallium arsenide, a III-V semiconductor used for 850 to 950 nm infrared LEDs.
- Near-infrared (NIR)
- Light just beyond visible red, roughly 780 to 1400 nm. MANULED parts cover 850 to 950 nm. Learn more
- Peak wavelength
- The wavelength at which an LED emits the most light.
- Radiant flux (optical power)
- Total light power emitted, in milliwatts, at a stated drive current.
- Forward voltage (Vf)
- Voltage across the LED at its operating current.
- Double heterostructure
- A layered junction that confines carriers to a thin active layer for efficient emission.
- Time of flight (ToF)
- Measuring distance from the travel time of an emitted light pulse. Learn more
- Driver monitoring system (DMS)
- In-cabin camera and infrared illumination that tracks driver attention. Learn more
- Photoplethysmography (PPG)
- Optical measurement of blood volume changes, used in pulse oximeters and wearables. Learn more